Fabrication and characterization of a PbTe quantum dots multilayer structure

Multilayer PbTe quantum dots (QDs) and SiO₂ were grown by pulsed laser deposition (PLD) and Plasma enhanced chemical vapor deposition (PECVD) techniques. The crystalline structure, QD size and size dispersion were observed by high-resolution transmission electron microscopy (HRTEM) measurements. This technique allows one to grow PbTe QDs as small as 1.8 nm diameter and 0.6 nm size dispersion. The whole structure can be used in a Fabry–Perot cavity for an optical device operating at the mid-infrared region.     

Quantum Teleportation via Hybrid Entangled States

In this paper, we study quantum teleportation of atomic states via a hybrid entangled state (HES) involving an atom and a cavity field. And we investigate how to implement controlled phase (CP) gates between atomic internal Finally, a brief discussion about the feasibility of this scheme in experiment is presented.     

Influence of transition metal ions on the textural properties of alumina and aluminasilicates

Accelerated phase transformations and chemical reactions of metastable aluminas and kaolinite, doped with Cu^{2 +}, Mn^{3 +}/Mn^{2 +} and Fe^{3 +}/Fe^{2 +} ions, are accompanied with accelerated decrease of surface area and pore volume values. The phenomena in metal ion doped samples are explained by a catalytic mechanism, in terms of the Jahn-Teller effect. This revised version was published online in June 2006 with corrections to the Cover Date.     

Anti-BZ-Structure in Effect Algebras

The definitions of sharply approximating effect algebras, anti-BZ-effect algebras, central approximating effect algebras, and S-anti-BZ-effect algebras are given, the relationships between sharply approximating effect algebras and anti-BZ-effect algebras, between central approximating effect algebras and anti-BZ-effect algebras are established, and the set of anti-BZ-sharp elements in S-anti-BZ-effect algebras is proved to be an orthomodular lattice.     

Equivariant Spectral Triples on the Quantum SU(2) Group

We characterize all equivariant odd spectral triples for the quantum SU(2) group acting on its L ₂-space and having a nontrivial Chern character. It is shown that the dimension of an equivariant spectral triple is at least three, and given any element of the K-homology group of SU_q(2), there is an equivariant odd spectral triple of dimension 3 inducing that element. The method employed to get equivariant spectral triples in the quantum case is then used for classical SU(2), and we prove that for p < 4, there does not exist any equivariant spectral triple with nontrivial K-homology class and dimension p acting on the L ₂-space.The first author would like to acknowledge support from the National Board of Higher Mathematics, India.     

Stationary entanglement between macroscopic mechanical oscillators

We show that the optomechanical coupling between an optical cavity mode and two movable cavity mirrors is able to entangle two different macroscopic oscillation modes of the mirrors. This continuous variable entanglement is maintained by the light bouncing between the mirrors and is robust against thermal noise. In fact, it could be experimentally demonstrated using present technology. Received 2 September 2002 / Received in final form 10 October 2002 Published online 7 January 2003     

Photorefractive Four-Wave Mixing Switches Utilizing Pockels Effect -Longitudinal and Lateral Switches-

We carried out detailed calculations for photorefractive wave-mixing switches based on one of three crystals with high electro-optic coefficients, namely, BaTiO₃, Strontium Barium Niobate (SBN (0.75)), and Potasium Sodium Strontium Barium Niobate (KNSBN). A comparison of results for the three crystals shows that a 0_-cut BaTiO³ crystal is suitable for a longitudinal switch and requires a voltage of about 80 for a 2-mm-thick crystal to induce sufficient phase mismatch. The electrodes must be transparent for the incident and diffracted beams. A 45_-cut SBN (0.75) crystal, however, is suitable for a lateral switch and requires a voltage of about 150 for a 1-mm-wide crystal. The electrodes do not need to be transparent.     

Negative luminescence in semiconductors: a retrospective view

Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR.     

Ultrafast softening in InMnAs

We have used two-color time-resolved magneto-optical Kerr effect spectroscopy to manipulate and detect dynamic processes of spin/magnetic order in a ferromagnetic semiconductor InMnAs. We observed ultrafast photo-induced “softening” (i.e., transient decrease of coercivity) due to spin-polarized transient carriers. This transient softening persists only during the carrier lifetime (2 ps) and returns to its original value as soon as the carriers recombine to disappear. Our data clearly demonstrates that magnetic properties, e.g., coercivity, can be strongly and reversibly modified in an ultrafast manner. We attribute the origin of this unusual phenomenon to carrier-mediated ferromagnetic exchange interactions between Mn ions. We discuss the dependence of data on the pump polarization, pump intensity, and sample temperature. Our observation opens up new possibilities for ultrafast optical manipulation of ferromagnetic order as well as providing a new avenue for studying the dynamics of long-range collective order in strongly correlated many-body systems.     

从电子上看康普顿效应

在康普顿效应中，散射光子与入射光子的频率不同，但在电子静止的参考系，可以证明光子的频率在碰撞前后相同。